发明名称 |
METHOD OF FORMING SUBSTRATE CONTACT FOR SEMICONDUCTOR ON INSULATOR (SOI) SUBSTRATE |
摘要 |
A semiconductor structure is provided that includes a material stack including an epitaxially grown semiconductor layer on a base semiconductor layer, a dielectric layer on the epitaxially grown semiconductor layer, and an upper semiconductor layer present on the dielectric layer. A capacitor is present extending from the upper semiconductor layer through the dielectric layer into contact with the epitaxially grown semiconductor layer. The capacitor includes a node dielectric present on the sidewalls of the trench and an upper electrode filling at least a portion of the trench. A substrate contact is present in a contact trench extending from the upper semiconductor layer through the dielectric layer and the epitaxially semiconductor layer to a doped region of the base semiconductor layer. A substrate contact is also provided that contacts the base semiconductor layer through the sidewall of a trench. Methods for forming the above-described structures are also provided.
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申请公布号 |
US2013214382(A1) |
申请公布日期 |
2013.08.22 |
申请号 |
US201313845560 |
申请日期 |
2013.03.18 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
WANG GENG;BOOTH, JR. ROGER A.;CHENG KANGGUO;ERVIN JOSEPH;PEI CHENGWEN;TODI RAVI M. |
分类号 |
H01L29/06 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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