| 发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR WAFERS |
| 摘要 |
A method of manufacturing semiconductor wafers is provided which facilitates formation of orientation flat lines and allows beveling work without problems.;The method of manufacturing semiconductor wafers according to the present invention is a method of manufacturing semiconductor wafers, in which a plurality of small-diameter wafers is cut out from a large-diameter semiconductor wafer, the method including: a marking step of forming straight groove-like orientation flat lines by a laser beam so as to cross the respective small-diameter wafers in each row in the large-diameter semiconductor wafer, wherein cutout positions of the small-diameter wafers are aligned in rows in a specific direction, collectively for each of the rows; and a cutting step of cutting out the small-diameter wafers separately from the large-diameter semiconductor wafer by a laser beam after the marking step. |
| 申请公布号 |
US2014154870(A1) |
申请公布日期 |
2014.06.05 |
| 申请号 |
US201314087883 |
申请日期 |
2013.11.22 |
| 申请人 |
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY ;Fujikoshi Machinery Corp. |
发明人 |
NAKAMURA Yoshio;ICHIKAWA Daizo;SUMIZAWA Haruo;HARA Shiro;KHUMPUANG Sommawan;IKEDA Shinichi |
| 分类号 |
H01L21/78 |
主分类号 |
H01L21/78 |
| 代理机构 |
|
代理人 |
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| 主权项 |
1. A method of manufacturing semiconductor wafers, in which a plurality of small-diameter wafers is cut out from a large-diameter semiconductor wafer, the method comprising:
a marking step of forming straight groove-like orientation flat lines by a laser beam so as to cross the respective small-diameter wafers in each row in the large-diameter semiconductor wafer, wherein cutout positions of the small-diameter wafers are aligned in rows in a specific direction, collectively for each of the rows; and a cutting step of cutting out the small-diameter wafers separately from the large-diameter semiconductor wafer by a laser beam after the marking step.
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| 地址 |
Tokyo JP |
