发明名称 SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
摘要 A semiconductor device and method for fabricating a semiconductor device is disclosed. An exemplary semiconductor device includes a semiconductor substrate including an active region including a plurality of device regions. The semiconductor device further includes a first device disposed in a first device region of the plurality of device regions, the first device including a first gate structure, first gate spacers disposed on sidewalls of the first gate structure, and first source and drain features. The semiconductor device further includes a second device disposed in a second device region of the plurality of device regions, the second device including a second gate structure, second gate spacers disposed on sidewalls of the second gate structure, and second source and drain features. The second and first source and drain features having a source and drain feature and a contact feature in common. The common contact feature being a self-aligned contact.
申请公布号 US2015017768(A1) 申请公布日期 2015.01.15
申请号 US201414269748 申请日期 2014.05.05
申请人 Taiwan Semiconductor Manufacturing Company Ltd. 发明人 Wann Clement Hsingjen;Chang Chih-Hao;Chang Shou Zen;Ko Chih-Hsin;Okuno Yasutoshi;Kelly Andrew Joseph
分类号 H01L21/8238;H01L29/66 主分类号 H01L21/8238
代理机构 代理人
主权项 1. A method of manufacturing a semiconductor device comprising: providing a substrate including an active region and an isolation region; forming first and second sacrificial contact plugs on the substrate; forming first spacers on sidewalls of the first sacrificial contact plug and second spacers on sidewalls of the second sacrificial contact plug; forming a gate structure in a region between the first and second sacrificial contact plugs and over the substrate, the gate structure being in contact with a spacer of the first spacers and a spacer of the second spacers; selectively removing the first and second sacrificial contact plugs to define first and second source and drain regions; epitaxially growing first and second source and drain features in the first and second source and drain regions; and forming first and second contact features over the first and second source and drain features, the first and second contact features being in electrical contact with the first and second source and drain features.
地址 Hsin-Chu TW