SOLID-STATE IMAGING ELEMENT AND METHOD OF MANUFACTURING THE SAME

摘要

Provided are a solid-state imaging element which can be simply manufactured and can control movement of electric charges in an accumulation region with a high degree of accuracy, and a method of manufacturing the same. A solid-state imaging element (1a) includes a substrate (11) having a first conductivity type; an accumulation region (12) having a second conductivity type and provided in the substrate (11); a read-out region (13) for receiving the transferred electric charges accumulated in the accumulation region (12); and a transfer section (14) for transferring the electric charges from the accumulation region (12) to the read-out region (13). An impurity concentration modulation region 121 having a locally high concentration of an impurity having the second conductivity type, or having a locally low concentration of an impurity having the first conductivity type is formed in a part of the accumulation region (12). An area of the impurity concentration modulation region (121) per unit distance with respect to the transfer section (14), or a density of the discretely provided impurity concentration modulation region (121) increases with decreasing distance to the transfer section (14).

主权项

1. A solid-state imaging element comprising:
a substrate having a first conductivity type; an accumulation region having a second conductivity type opposite to the first conductivity type and provided in the substrate, for accumulating electric charges generated by a photoelectric conversion; a read-out region having the second conductivity type and provided in the substrate, for receiving the transferred electric charges accumulated in the accumulation region; and a transfer section formed above a region between the accumulation region and the read-out region in the substrate and provided for transferring the electric charges from the accumulation region to the read-out region, wherein an impurity concentration modulation region having a locally high concentration of an impurity having the second conductivity type, or having a locally low concentration of an impurity having the first conductivity type is formed in a part of the accumulation region, and a plurality of the impurity concentration modulation regions extend parallel to a direction away from the transfer section, and an interval between adjacent impurity concentration modulation regions becomes narrow with decreasing distance to a center of the transfer section among the impurity concentration modulation regions.