| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a silicon substrate etching method and a silicon substrate etching device capable of improving accuracy for processing a hole penetrating through a silicon insulation layer and a silicon substrate in an area including a wiring. <P>SOLUTION: A hole penetrating through silicon insulation layers 13a and 15a and a silicon substrate 11 is formed on a silicon substrate 11 having the silicon insulation layers 13a and 15a that have recesses, in which dummy wirings 13d and 15d are embedded, and in which barrier metal layers 13b and 15b are formed on inner faces of the recesses, in an area including the dummy wirings 13d and 15d. After the dummy wirings 13d and 15d, the barrier metal layers 13b and 15b, and the silicon insulation layers 13a and 15d are etched, the silicon substrate 11 is etched. Additionally, before the etching of the silicon substrate 11 is completed, at least one of the silicon insulation layers 13a and 15a, and the silicon substrate 11 is spattered with rare gas. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
