| 摘要 |
<p>The present invention relates to a compound semiconductor solar cell. The compound semiconductor solar cell according to the present invention includes at least one light absorption layer which includes a base layer doped with a first thickness of a first conductivity type impurity and an emitter layer doped with a second thickness of a second conductivity type impurity which is thinner than the first thickness - the second conductivity type impurity is opposite to the first conductivity type impurity-; a first electrode located in the front side of the light entering surface of at least one light absorption layer; and a second electrode located to the back surface which is opposite to the light entering surface of at least one light absorption layer. The emitter layer is located in the back surface of the base layer in the light absorption layer.</p> |
