| 发明名称 |
METHOD FOR MODIFYING THE STRAIN STATE OF A BLOCK OF A SEMICONDUCTING MATERIAL |
| 摘要 |
Method for modifying the strain state of a block of a semiconducting material comprising steps for:
making a lower region of a block of semiconducting material resting on a substrate amorphous, while the crystalline structure of an upper region of the block in contact with the lower region is maintained,making a creep annealing with a sufficient thermal budget to enable creep of the lower region without recrystallizing the material of this lower region,making a recrystallization annealing of the lower region. |
| 申请公布号 |
US2015179474(A1) |
申请公布日期 |
2015.06.25 |
| 申请号 |
US201414575329 |
申请日期 |
2014.12.18 |
| 申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT |
发明人 |
MAITREJEAN Sylvain;Reboh Shay;Wacquez Romain |
| 分类号 |
H01L21/324;H01L29/78;H01L29/16;H01L21/02 |
主分类号 |
H01L21/324 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. Method for modifying the strain state of a block of a semiconducting material comprising steps in the subsequent following order, consisting of:
a) making a lower region of a block of semiconducting material resting on a substrate amorphous, while the crystalline structure of an upper region of the block in contact with the lower region is maintained, b) making at least one creep annealing with a suitable duration and temperature to enable creep of the lower region without recrystallizing the material of this lower region, c) making at least one recrystallization annealing of the lower region of the semiconducting block. |
| 地址 |
Paris FR |
