发明名称 |
Density gradient cell array |
摘要 |
One or more techniques or systems for mitigating density gradients between two or more regions of cells are provided herein. In some embodiments, an array of cells is associated with a dummy region. For example, the array of cells includes an array of gates and an array of OD regions. In some embodiments, the array of gates includes a first set of gates associated with a first gate dimension and a second set of gates associated with a second gate dimension. In some embodiments, the array of OD regions includes a first set of OD regions associated with a first OD dimension and a second set of OD regions associated with a second OD dimension. In this manner, at least one of a pattern density, gate density, or OD density is customized to a region associated with active cells, thus mitigating density gradients between respective regions. |
申请公布号 |
US9147694(B2) |
申请公布日期 |
2015.09.29 |
申请号 |
US201213721552 |
申请日期 |
2012.12.20 |
申请人 |
Taiwan Semiconductor Manufacturing Company Limited |
发明人 |
Chang Yu-Jung;Hsu C. R.;Hsu Chin-Chang;Yang Wen-Ju;Fu Chung-min |
分类号 |
G06F17/50;H01L27/118;H01L27/02 |
主分类号 |
G06F17/50 |
代理机构 |
Cooper Legal Group, LLC |
代理人 |
Cooper Legal Group, LLC |
主权项 |
1. A method for forming an array of dummy cells for mitigating density gradients between an active region comprising a plurality of active cells and a dummy region adjacent the active region and comprising a plurality of dummy cells, the method comprising:
laying out the array of dummy cells, the array of dummy cells comprising:
a plurality of empty cell spaces; anda first set of dummy cells, comprising:
a first set of gates having a first gate dimension; anda first set of oxide defined (OD) regions having a first OD dimension; inserting at least one of:
a first subset of gates having the first gate dimension into at least some of the plurality of empty cell spaces; ora first subset of OD regions having the first OD dimension into at least some of the plurality of empty cell spaces; and inserting at least one of:
a second set of gates having a second gate dimension into at least some remaining empty cell spaces of the plurality of empty cell spaces; ora second set of OD regions having a second OD dimension into at least some remaining empty cell spaces of the plurality of empty cell spaces. |
地址 |
Hsin-Chu TW |