发明名称 Density gradient cell array
摘要 One or more techniques or systems for mitigating density gradients between two or more regions of cells are provided herein. In some embodiments, an array of cells is associated with a dummy region. For example, the array of cells includes an array of gates and an array of OD regions. In some embodiments, the array of gates includes a first set of gates associated with a first gate dimension and a second set of gates associated with a second gate dimension. In some embodiments, the array of OD regions includes a first set of OD regions associated with a first OD dimension and a second set of OD regions associated with a second OD dimension. In this manner, at least one of a pattern density, gate density, or OD density is customized to a region associated with active cells, thus mitigating density gradients between respective regions.
申请公布号 US9147694(B2) 申请公布日期 2015.09.29
申请号 US201213721552 申请日期 2012.12.20
申请人 Taiwan Semiconductor Manufacturing Company Limited 发明人 Chang Yu-Jung;Hsu C. R.;Hsu Chin-Chang;Yang Wen-Ju;Fu Chung-min
分类号 G06F17/50;H01L27/118;H01L27/02 主分类号 G06F17/50
代理机构 Cooper Legal Group, LLC 代理人 Cooper Legal Group, LLC
主权项 1. A method for forming an array of dummy cells for mitigating density gradients between an active region comprising a plurality of active cells and a dummy region adjacent the active region and comprising a plurality of dummy cells, the method comprising: laying out the array of dummy cells, the array of dummy cells comprising: a plurality of empty cell spaces; anda first set of dummy cells, comprising: a first set of gates having a first gate dimension; anda first set of oxide defined (OD) regions having a first OD dimension; inserting at least one of: a first subset of gates having the first gate dimension into at least some of the plurality of empty cell spaces; ora first subset of OD regions having the first OD dimension into at least some of the plurality of empty cell spaces; and inserting at least one of: a second set of gates having a second gate dimension into at least some remaining empty cell spaces of the plurality of empty cell spaces; ora second set of OD regions having a second OD dimension into at least some remaining empty cell spaces of the plurality of empty cell spaces.
地址 Hsin-Chu TW