| 发明名称 | Programming methods and memories | ||
| 摘要 | Methods of programming a memory and memories are disclosed. In at least one embodiment, a memory is programmed by determining a pretarget threshold voltage for a selected cell, wherein the pretarget threshold voltage is determined using pretarget threshold voltage values for at least one neighbor cell of the selected cell. | ||
| 申请公布号 | US9147476(B2) | 申请公布日期 | 2015.09.29 |
| 申请号 | US201314108822 | 申请日期 | 2013.12.17 |
| 申请人 | Micron Technology, Inc. | 发明人 | Sarin Vishal;Radke William H.;Roohparvar Frankie F. |
| 分类号 | G11C11/00;G11C16/10;G11C16/04;G11C16/34 | 主分类号 | G11C11/00 |
| 代理机构 | Dicke, Billig & Czaja, PLLC | 代理人 | Dicke, Billig & Czaja, PLLC |
| 主权项 | 1. A method of programming a memory, comprising: determining a pretarget threshold voltage for a selected cell, wherein the pretarget threshold voltage is determined using a pretarget threshold voltage value for at least one neighbor cell of the selected cell; wherein the at least one neighbor cell of the selected cell is preprogrammed to the pretarget threshold voltage value for the at least one neighbor cell of the selected cell and is subsequently programmed to a target threshold voltage value for the at least one neighbor cell of the selected cell. | ||
| 地址 | Boise ID US | ||