MAGNETORESISTIVE EFFECT ELEMENT, METHOD FOR MANUFACTURING MAGNETORESISTIVE EFFECT ELEMENT AND MAGNETIC MEMORY

摘要

A magnetoresistive effect element according to an embodiment of the present invention comprises first and second magnetic layers, an intermediate layer between the first and second magnetic layers, and a side wall protective film which is on a lateral surface of the first magnetic layer and has a multilayer structure. The side wall protective film comprises: a first protective film which is provided on the lateral surface of the first magnetic layer and contains, as a main component, a first element that has an atomic number larger than the atomic number of a first magnetic element that constitutes the inside of the first magnetic layer; and a second protective film which is provided on a surface of the first protective film, said surface being on the reverse side of the first magnetic layer-side surface, and contains, as a main component, a second element that has an atomic number smaller than the atomic number of the first magnetic element.