发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 An object of the invention is to provide a method for manufacturing semiconductor devices that are flexible in which elements fabricated using a comparatively low-temperature (less than 500° C.) process are separated from a substrate. After a molybdenum film is formed over a glass substrate, a molybdenum oxide film is formed over the molybdenum film, a nonmetal inorganic film and an organic compound film are stacked over the molybdenum oxide film, and elements fabricated by a comparatively low-temperature (less than 500° C.) process are formed using existing manufacturing equipment for large glass substrates, the elements are separated from the glass substrate.
申请公布号 US2015270321(A1) 申请公布日期 2015.09.24
申请号 US201514669722 申请日期 2015.03.26
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 JINBO Yasuhiro;ISA Toshiyuki;Honda Tatsuya
分类号 H01L27/32;H01L29/786;H01L29/24;H01L21/02;H01L29/45;H01L29/423;H01L51/56;H01L29/66;H01L29/49 主分类号 H01L27/32
代理机构 代理人
主权项 1. (canceled)
地址 Atsugi-shi JP