发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
An object of the invention is to provide a method for manufacturing semiconductor devices that are flexible in which elements fabricated using a comparatively low-temperature (less than 500° C.) process are separated from a substrate. After a molybdenum film is formed over a glass substrate, a molybdenum oxide film is formed over the molybdenum film, a nonmetal inorganic film and an organic compound film are stacked over the molybdenum oxide film, and elements fabricated by a comparatively low-temperature (less than 500° C.) process are formed using existing manufacturing equipment for large glass substrates, the elements are separated from the glass substrate. |
申请公布号 |
US2015270321(A1) |
申请公布日期 |
2015.09.24 |
申请号 |
US201514669722 |
申请日期 |
2015.03.26 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
JINBO Yasuhiro;ISA Toshiyuki;Honda Tatsuya |
分类号 |
H01L27/32;H01L29/786;H01L29/24;H01L21/02;H01L29/45;H01L29/423;H01L51/56;H01L29/66;H01L29/49 |
主分类号 |
H01L27/32 |
代理机构 |
|
代理人 |
|
主权项 |
1. (canceled) |
地址 |
Atsugi-shi JP |