发明名称 ETCHANT COMPOSITION FOR A METAL LAYER COMPRISING PHOSPHOROUS ACID
摘要 <p>The present invention relates to an etching solution composition for a metal film comprising phosphorous acid. According to the present invention, the present invention is capable of controlling a gradient of an etching slope without delaying an etching speed even though the present invention does not contain an environmentally regulated material as the etching composition for a metal film comprises phosphorous acid.</p>
申请公布号 KR20150107354(A) 申请公布日期 2015.09.23
申请号 KR20140030121 申请日期 2014.03.14
申请人 DONGWOO FINE-CHEM CO., LTD. 发明人 YU, IN HO;KUK, IN SEOL
分类号 C23F1/44;C23F1/10 主分类号 C23F1/44
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