发明名称 |
Substrate processing method |
摘要 |
A substrate processing method includes rotating a substrate about a central axis thereof; starting irradiation of a surface of the substrate with soft X-rays; simultaneously with or after starting the irradiation of the surface of the substrate with the soft X-rays, starting supply of pure water onto the surface of the substrate; stopping the supply of the pure water onto the surface of the substrate; and then stopping the irradiation of the surface of the substrate with the soft X-rays. |
申请公布号 |
US9142398(B2) |
申请公布日期 |
2015.09.22 |
申请号 |
US201414191365 |
申请日期 |
2014.02.26 |
申请人 |
Ebara Corporation |
发明人 |
Ishibashi Tomoatsu |
分类号 |
B08B3/00;H01L21/02;H01L21/67;B24B37/10;B24B37/34;B24B49/12;B08B3/02;B08B3/04;B08B7/00 |
主分类号 |
B08B3/00 |
代理机构 |
Baker & Hostetler LLP |
代理人 |
Baker & Hostetler LLP |
主权项 |
1. A substrate processing method comprising:
pressing a substrate against a polishing surface while supplying slurry onto the polishing surface to polish the substrate until a structure including at least a dielectric film is formed on the polished surface of the substrate; rotating the substrate having the polished surface about a central axis thereof; starting irradiation of the polished surface of the substrate with soft X-rays; simultaneously with or after starting the irradiation of the polished surface of the substrate with the soft X-rays, starting supply of pure water onto the polished surface of the substrate, wherein said irradiation with the soft X-rays and said supplying of the pure water onto the polished surface suppresses electrostatic charge on the dielectric film; stopping the supply of the pure water onto the polished surface of the substrate; and then stopping the irradiation of the polished surface of the substrate with the soft X-rays. |
地址 |
Tokyo JP |