发明名称 Substrate processing method
摘要 A substrate processing method includes rotating a substrate about a central axis thereof; starting irradiation of a surface of the substrate with soft X-rays; simultaneously with or after starting the irradiation of the surface of the substrate with the soft X-rays, starting supply of pure water onto the surface of the substrate; stopping the supply of the pure water onto the surface of the substrate; and then stopping the irradiation of the surface of the substrate with the soft X-rays.
申请公布号 US9142398(B2) 申请公布日期 2015.09.22
申请号 US201414191365 申请日期 2014.02.26
申请人 Ebara Corporation 发明人 Ishibashi Tomoatsu
分类号 B08B3/00;H01L21/02;H01L21/67;B24B37/10;B24B37/34;B24B49/12;B08B3/02;B08B3/04;B08B7/00 主分类号 B08B3/00
代理机构 Baker & Hostetler LLP 代理人 Baker & Hostetler LLP
主权项 1. A substrate processing method comprising: pressing a substrate against a polishing surface while supplying slurry onto the polishing surface to polish the substrate until a structure including at least a dielectric film is formed on the polished surface of the substrate; rotating the substrate having the polished surface about a central axis thereof; starting irradiation of the polished surface of the substrate with soft X-rays; simultaneously with or after starting the irradiation of the polished surface of the substrate with the soft X-rays, starting supply of pure water onto the polished surface of the substrate, wherein said irradiation with the soft X-rays and said supplying of the pure water onto the polished surface suppresses electrostatic charge on the dielectric film; stopping the supply of the pure water onto the polished surface of the substrate; and then stopping the irradiation of the polished surface of the substrate with the soft X-rays.
地址 Tokyo JP