| 摘要 |
The purpose of the present invention is to provide a sintered oxide capable of achieving a sufficiently low resistivity even in manufacturing processes for film production and device fabrication in which the maximum temperature is kept low, and a transparent conductive oxide film obtained therefrom. A sintered oxide having indium, zirconium, yttrium, hafnium and oxygen as constituent elements. The sintered oxide is characterized in that when the indium, zirconium, yttrium and hafnium are represented as In, Zr, Y, Hf, respectively, in atomic ratios, Zr/(In+Zr+Y+Hf) is 0.1-3.0 at%, Y/(In+Zr+Y+Hf) is 0.005-0.5 at%, and Hf/(In+Zr+Y+Hf) is 0.0002-0.15 at%. |
