| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
| 摘要 |
A semiconductor device includes a substrate joined to a base by a first junction material and a semiconductor element joined to the substrate by a second junction material. At least one of the first and second junction materials comprises tin, antimony, and cobalt. In some embodiments, the junction materials comprise cobalt having a weight percentage between 0.05 wt % and 0.2 wt %, antimony with a weight percentage between 1 wt % and 10 wt %, and the balance being substantially tin. |
| 申请公布号 |
US2015262959(A1) |
申请公布日期 |
2015.09.17 |
| 申请号 |
US201414475535 |
申请日期 |
2014.09.02 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
HISAZATO Yuuji;KODANI Kazuya;SASAKI Yo;HIRATSUKA Daisuke;MATSUMURA Hitoshi;KITAZAWA Hideaki;TADA Nobumitsu;SEKIYA Hiroki |
| 分类号 |
H01L23/00 |
主分类号 |
H01L23/00 |
| 代理机构 |
|
代理人 |
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| 主权项 |
1. A semiconductor device, comprising:
a substrate joined to a base via a first junction material; a semiconductor element joined to the substrate via a second junction material, wherein at least one of the first junction material and the second junction material comprises tin, antimony, and cobalt. |
| 地址 |
Tokyo JP |
