| 摘要 |
<p>A problem to be resolved by the present invention is to provide a method for drying a substrate capable of restraining leaning defects between adjacent pattern structures, when a semiconductor pattern structure having the size of the smallest light width and a high aspect ratio compared to the size thereof is formed. In the method for drying a substrate according to one embodiment of the present invention, a substrate processed by a cleaning solution is prepared. The cleaning solution is removed from the substrate using deionized water. A first organic solvent including alcohol is provided to the substrate to replace the deionized water remaining on the substrate with the first organic solvent. A second organic solvent including hydrofluoroolefin is provided to the substrate to replace the first organic solvent on the substrate with the second organic solvent. The second organic solvent is removed from the substrate.</p> |
