发明名称 |
Nitride semiconductor stacked body and semiconductor light emitting device |
摘要 |
<p>According to one embodiment, the n-side electron barrier layer is provided at a region close to an end of the active layer on the n-type cladding layer side. The region is located within a range of an electron diffusion length from the active layer. The n-side electron barrier layer prevents electrons having energy which is not more than predetermined energy from being injected into the active layer.</p> |
申请公布号 |
EP2919282(A1) |
申请公布日期 |
2015.09.16 |
申请号 |
EP20140180012 |
申请日期 |
2014.08.06 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
FURUYAMA, HIDETO;KIMURA, SHIGEYA |
分类号 |
H01L33/06;H01L33/14;H01L33/32 |
主分类号 |
H01L33/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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