| 摘要 |
一种半导体元件，包含：基板、第一及第二槽状结构。第一槽状结构位于该基板，包含第一导电层、第一掺杂层及第一绝缘层，第一绝缘层位于该第一导电层与该第一掺杂层之间。第二槽状结构位于该基板，与该第一槽状结构之间以该基板之一间隔部分作为间隔，包含第二导电层及第二绝缘层。该第一掺杂层设置第一接点，该基板之该间隔部分设置第二接点，该第二导电层设置第三接点；其中，该基板之该间隔部分形成一电阻，耦接该第一接点与该第二接点之间，该基板、该第二绝缘层及该第二导电层形成一电容，耦接该第二接点与该第三接点之间。 A semiconductor device includes a substrate, a first groove structure and a second groove structure. The first groove structure is installed in the substrate and includes a first conductive layer, a first doping layer and a first insulation layer, which is placed between the first conductive layer and the first doping layer. The second groove structure is installed in the substrate with an isolation part of the substrate between it and the first groove structure and includes a second conductive layer and a second insulation layer. The first doping layer is installed with a first contact, the isolation part of the substrate is installed with a second contact, and the second conductive layer is installed with a third contact. The isolation part of the substrate forms a resistor, coupled between the first contact and the second contact, and the substrate, the second insulation layer and the second conductive layer together form a capacitor, coupled between the second contact and the third contact. 【代表图】 【本案指定代表图】：第2图 【本代表图之符号简单说明】： 200 半导体元件 210 基板 212 上表面 220、230 槽状结构 221、231 掺杂层 222、232 绝缘层 223、233 导电层 224、225、234、235 接点 240、250、260、270 虚线框选 |
