发明名称 Hall device, magnetic sensor having same, and signal correcting method thereof
摘要 By restricting the concentration and the depth of an n-type impurity region which is a magnetosensitive portion of a Hall device to appropriate ranges, it is possible to improve linearity of temperature characteristics in detecting a magnetic field intensity with high accuracy.;In order to obtain linearity of the temperature characteristics of the constant-current sensitivity, there is provided a Hall device including a p-type impurity region 1 and an n-type impurity region 2 that is disposed on the p-type impurity region 1 and that serves as a magnetosensitive portion, wherein an n-type impurity concentration N and a distribution depth D of the n-type impurity region 2 satisfy relational expressions of N<1.0×1016 and N>3.802×1016×D−1.761.
申请公布号 US9134383(B2) 申请公布日期 2015.09.15
申请号 US201314104334 申请日期 2013.12.12
申请人 Asahi Kasei Microdevices Corporation 发明人 Fujita Taisuke;Kataoka Makoto;Yayoi Tatsuhiko
分类号 G01N27/72;G01R33/00;G01R33/07;H01L43/06 主分类号 G01N27/72
代理机构 Morgan, Lewis & Bockius LLP 代理人 Morgan, Lewis & Bockius LLP
主权项 1. A Hall device comprising: a p-type impurity region; and an n-type impurity region disposed on the p-type impurity region and serving as a magnetosensitive portion, wherein an n-type impurity concentration N (atoms/cm3) and a distribution depth D (μm) of the n-type impurity region satisfy following relational expressions: N<1.0×1016 andN>3.802×1016×D−1.761, wherein the n-type impurity concentration N represents a maximum concentration of the n-type impurity concentration in the n-type impurity region and the distribution depth D represents a length in depth direction from a point at which the n-type impurity concentration is a maximum to a point at which the n-type impurity concentration is 1/10 of the n-type impurity concentration N.
地址 Tokyo JP