发明名称 |
Hall device, magnetic sensor having same, and signal correcting method thereof |
摘要 |
By restricting the concentration and the depth of an n-type impurity region which is a magnetosensitive portion of a Hall device to appropriate ranges, it is possible to improve linearity of temperature characteristics in detecting a magnetic field intensity with high accuracy.;In order to obtain linearity of the temperature characteristics of the constant-current sensitivity, there is provided a Hall device including a p-type impurity region 1 and an n-type impurity region 2 that is disposed on the p-type impurity region 1 and that serves as a magnetosensitive portion, wherein an n-type impurity concentration N and a distribution depth D of the n-type impurity region 2 satisfy relational expressions of N<1.0×1016 and N>3.802×1016×D−1.761. |
申请公布号 |
US9134383(B2) |
申请公布日期 |
2015.09.15 |
申请号 |
US201314104334 |
申请日期 |
2013.12.12 |
申请人 |
Asahi Kasei Microdevices Corporation |
发明人 |
Fujita Taisuke;Kataoka Makoto;Yayoi Tatsuhiko |
分类号 |
G01N27/72;G01R33/00;G01R33/07;H01L43/06 |
主分类号 |
G01N27/72 |
代理机构 |
Morgan, Lewis & Bockius LLP |
代理人 |
Morgan, Lewis & Bockius LLP |
主权项 |
1. A Hall device comprising:
a p-type impurity region; and an n-type impurity region disposed on the p-type impurity region and serving as a magnetosensitive portion, wherein an n-type impurity concentration N (atoms/cm3) and a distribution depth D (μm) of the n-type impurity region satisfy following relational expressions:
N<1.0×1016 andN>3.802×1016×D−1.761, wherein the n-type impurity concentration N represents a maximum concentration of the n-type impurity concentration in the n-type impurity region and the distribution depth D represents a length in depth direction from a point at which the n-type impurity concentration is a maximum to a point at which the n-type impurity concentration is 1/10 of the n-type impurity concentration N. |
地址 |
Tokyo JP |