| 摘要 |
According to one embodiment, a solid-state imaging device includes a semiconductor layer, an organic photoelectric conversion layer, and microlenses. A plurality of photoelectric conversion elements are provided in the semiconductor layer. The organic photoelectric conversion layer is provided on a light receiving surface of the semiconductor layer, absorbs and photoelectrically converts light of a predetermined wavelength region, and transmits light of a wavelength region except for the predetermined wavelength region. The microlenses are provided at positions facing the respective light receiving surfaces of the plurality of photoelectric conversion elements with the organic photoelectric conversion layer interposed therebetween, and concentrate incident light on the photoelectric conversion elements. |
