发明名称 Method for Manufacturing Electron Source
摘要 A conventional method to process a tip fails to designate the dimension of the shape of the end of the tip, and so fails to obtain a tip having any desired diameter. Impurities may be attached to the tip. Based on a correlation between the voltage applied or the time during processing of the end of the tip and the diameter of the tip end, the applied voltage is controlled so as to obtain a desired diameter of the tip end for processing of the tip. This allows a sharpened tip made of a tungsten monocrystal thin wire to be manufactured to have any desired diameter in the range of 0.1 μm or more and 2.0 μm or less.
申请公布号 US2015255240(A1) 申请公布日期 2015.09.10
申请号 US201214434824 申请日期 2012.10.12
申请人 HITACHI HIGH-TECHNOLOGIES CORPORATION 发明人 Ichimura Takashi;Nitta Hisao;Sonobe Nobuyuki;Cho Boklae;Murakoshi Hisaya
分类号 H01J37/065;H01J37/285;C25F3/26 主分类号 H01J37/065
代理机构 代理人
主权项 1. A method for manufacturing an electron source including: a tip prepared by sharpening an end of a thin wire like a needle; and a heating element to heat the tip, comprising: disposing the tip and the heating element in a vacuum vessel; heating the heating element by applying current to the heating element; and applying voltage between the tip and an electrode disposed opposed to the tip and adjusting the voltage based on a relationship acquired beforehand between a diameter of the end and the voltage to process the end of the tip to have a desired size.
地址 Tokyo JP