Compensating Source Side Resistance Versus Word Line

摘要

A method and non-volatile storage system are provided in which the voltage applied to the source end of a NAND string depends on the location of the non-volatile storage element that is selected for sensing. This may be done without body-biasing the NAND string. Having the magnitude of the voltage applied to the source end of a NAND string depend on the location of the selected memory cell (without any body biasing) helps to mitigate failures that are dependent on which word line is selected during a sensing operation of one embodiment. Additionally, the magnitude of a read pass voltage may depend on either the source line voltage or the location of the selected memory cell.

主权项

1. A non-volatile storage device comprising:
a plurality of strings of non-volatile storage elements, each string having a drain end and a source end; a common source line switchably coupled to the source end of each of the strings; a plurality of bit lines, wherein the drain end of each of the strings is associated with a bit line of the plurality of bit lines; a plurality of word lines associated with the plurality of strings; and managing circuitry in communication with the common source line and the plurality of word lines, wherein the managing circuitry is configured to apply a reference voltage to a selected word line of the plurality of word lines, wherein the managing circuitry is configured to apply a first voltage to the common source line while the reference voltage is applied to the selected word, wherein the managing circuitry is configured to sense a condition of respective selected non-volatile storage elements on the plurality of strings that are associated with the selected word line in response to the reference voltage, wherein the first voltage has a magnitude that depends on the distance between the source end of the respective strings and the respective selected non-volatile storage elements and results in the same amount of back bias to the strings regardless of which of the plurality of word lines is selected.