Semiconductor device and method of manufacturing the same

摘要

A semiconductor device having a main electrode connected to a first semiconductor region and a second semiconductor layer on a semiconductor substrate so that a pn-junction diode is formed with the first semiconductor region being interposed and a Schottky barrier diode is formed with the second semiconductor layer being interposed on a surface of the semiconductor substrate, the semiconductor device includes a first electrode configured to ohmic-contact the first semiconductor region; a second electrode configured to Schottky-contact the second semiconductor layer and not having a portion directly contacting the first electrode; and a conductive reaction suppression layer to suppress a reaction between a material configuring the first electrode and a material configuring the second electrode are provided on the surface of the semiconductor substrate, and the main electrode is electrically connected to the first electrode and the second electrode.

主权项

1. A semiconductor device comprising:
a semiconductor substrate, on which a semiconductor region having a first conductivity type is locally formed on a surface of a semiconductor layer having a second conductivity type opposite to the first conductivity type; a main electrode, which is provided on a surface of the semiconductor substrate and which is connected to the semiconductor region and the semiconductor layer such that a pn-junction diode is formed with the semiconductor region and a Schottky barrier diode is formed with the semiconductor layer; a first electrode configured to ohmic-contact the semiconductor region; a second electrode configured to Schottky-contact the semiconductor layer and not having a portion directly contacting the first electrode; and a conductive reaction suppression layer configured to contact the first electrode and the second electrode and to suppress a reaction between a material configuring the first electrode and a material configuring the second electrode are provided on the surface of the semiconductor substrate, wherein the main electrode is electrically connected to the first electrode and the second electrode.