| 摘要 |
The objective of the present invention is to provide a semiconductor device which suppresses permeation of moisture into the semiconductor device from the vicinity of a pad electrode of the semiconductor device having a backside illumination type photoelectric conversion device, and a manufacturing method thereof. The semiconductor device comprises a chip area including the backside illumination type photoelectric conversion device, a mark shape exterior part (MK), the pad electrode (PA) and a connection part (SR). The mark shape exterior part (MK) includes an insulation film (IF) covering the whole side of a groove part (TH2) formed in a semiconductor substrate (SI). The pad electrode (PA) is arranged at a position overlapping the mark shape exterior part (MK). The connection part (SR) connects the pad electrode (PA) and the mark shape exterior part (MK). At least a part of a main surface (S2) of another side of the semiconductor substrate (SI) of the pad electrode (PA) is exposed by an aperture (TH) reaching the pad electrode (PA) from the main surface (S2) of the other side of the semiconductor substrate (SI). The mark shape exterior part (MK) and the connection part (SR) are arranged to surround at least a part of the outer circumference of the aperture (TH), in the case of being seen from a plane. |
