Method for manufacturing monocrystalline thin film and monocrystalline thin film device manufactured thereby

摘要

The present invention provides a method for manufacturing a monocrystalline film and a device formed by the above method, and according to the method mentioned above, lift-off of the monocrystalline silicon film is preferably performed and a high-purity monocrystalline silicon film can be obtained. A monocrystalline silicon substrate (template Si substrate) 201 is prepared, and on this monocrystalline silicon substrate 201, an epitaxial sacrificial layer 202 is formed. Subsequently, on this sacrificial layer 202, a monocrystalline silicon thin film 203 is rapidly epitaxially-grown using a RVD method, followed by etching of the sacrificial layer 202, whereby a monocrystalline silicon thin film 204 used as a photovoltaic layer of solar cells is formed.

主权项

1. A method for manufacturing a solar-cell monocrystalline silicon thin film, comprising:
(a) preparing a monocrystalline silicon substrate; (b) forming an epitaxial sacrificial layer on the substrate; (c) forming a monocrystalline silicon thin film on the sacrificial layer by epitaxial growth at a temperature T(° C.) and at a film growth rate GR (μm/min) which satisfies the condition of GR>2×1012exp [−325(kJ/mol)/8.31 (J/mol·K)/(T+273)(K)]; and (d) etching the sacrificial layer so as to manufacture a monocrystalline silicon thin film used as a photovoltaic layer for solar-cells.