发明名称 |
METHOD FOR MANUFACTURING SOI WAFER |
摘要 |
The present invention is a method for manufacturing an SOI wafer, including: implanting one or more gas ion selected from a hydrogen ion and a rare gas ion into a bond wafer composed of a semiconductor single crystal substrate from a surface of the bond wafer to form an ion-implanted layer; bonding the surface from which the ion is implanted into the bond wafer and a surface of a base wafer through an oxide film; and then delaminating the bond wafer at the ion-implanted layer by performing a delamination heat treatment with a heat treatment furnace to form the SOI wafer, wherein after the delamination heat treatment, a temperature of the heat treatment furnace is decreased to 250° C. or less at temperature-decreasing rate of less than 3.0° C./min, and then the SOI wafer and the bond wafer after delamination are taken out from the heat treatment furnace. |
申请公布号 |
US2015249035(A1) |
申请公布日期 |
2015.09.03 |
申请号 |
US201314428700 |
申请日期 |
2013.11.07 |
申请人 |
SHIN-ETSU HANDOTAI CO., LTD. |
发明人 |
Aga Hiroji;Yokokawa Isao;Ishizuka Toru |
分类号 |
H01L21/762;H01L21/02;H01L21/265 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Chiyoda-ku, Tokyo JP |