Process for production of functional device, process for production of ferroelectric material layer, process for production of field effect transistor, thin film transistor, field effect transistor, and piezoelectric ink jet head

摘要

A method of producing a functional device according to the present invention includes, in this order: the functional solid material precursor layer formation step of applying a functional liquid material onto a base material to form a precursor layer of a functional solid material; the drying step of heating the precursor layer to a first temperature in a range from 80° C. to 250° C. to preliminarily decrease fluidity of the precursor layer; the imprinting step of imprinting the precursor layer that is heated to a second temperature in a range from 80° C. to 300° C. to form an imprinted structure on the precursor layer; and the functional solid material layer formation step of heat treating the precursor layer at a third temperature higher than the second temperature to transform the precursor layer into a functional solid material layer.

主权项

1. A method of producing a field effect transistor including: an oxide conductor layer having a source region, a drain region, and a channel region, a gate electrode for controlling a conductive state of the channel region and a gate insulating layer provided between the gate electrode and the channel region and made of ferroelectric material or paraelectric material, wherein the oxide conductor layer, in which the channel region is thinner than the source region and the drain region, is formed in accordance with an imprinting technique, the method comprising:
a first step of forming the gate electrode on one of surfaces of a solid substrate; a second step of applying a solution containing a ferroelectric raw material or a paraelectric raw material at least onto the gate electrode of the solid substrate to form a film containing the ferroelectric raw material or the paraelectric raw material, and then performing heat treatment to form the gate insulating layer; and a third step of applying a solution containing an oxide conductive raw material onto the gate insulating layer to form a film containing the oxide conductive raw material, then imprinting the film containing the oxide conductive raw material with use of a convexo-concave mold formed such that a region corresponding to the channel region is convex relative to regions corresponding to the source region and the drain region, and thereafter performing heat treatment to form the source region, the drain region, and the channel region; the steps being performed in this order.