| 发明名称 | Dark current reduction for back side illuminated image sensor | ||
| 摘要 | A method of fabricating a semiconductor image sensor device is disclosed. A plurality of radiation-sensing regions is formed in a substrate. The radiation-sensing regions are formed in a non-scribe-line region of the image sensor device. An opening is formed in a scribe-line region of the image sensor device by etching the substrate in the scribe-line region. A portion of the substrate remains in the scribe-line region after the etching. The opening is then filled with an organic material. | ||
| 申请公布号 | US9123616(B2) | 申请公布日期 | 2015.09.01 |
| 申请号 | US201414323676 | 申请日期 | 2014.07.03 |
| 申请人 | Taiwan Semiconductor Manufacturing Company, Ltd. | 发明人 | Lu Shou-Shu;Huang Hsun-Ying;Huang Hsin-Jung;Chiu Chun-Mao;Hsiao Chia-Chi;Chang Yung-Cheng |
| 分类号 | H01L27/146 | 主分类号 | H01L27/146 |
| 代理机构 | Haynes and Boone, LLP | 代理人 | Haynes and Boone, LLP |
| 主权项 | 1. A method of fabricating a semiconductor image sensor device, comprising: forming a plurality of radiation-sensing elements in a first region of a substrate; partially removing the substrate in a second region that is different from the first region, wherein after the partially removing, a remaining portion of the substrate in the second region is substantially thinner than the substrate in the first region; and selectively etching away segments of the remaining portion of the substrate in the second region. | ||
| 地址 | Hsin-Chu TW | ||