发明名称 |
Method for manufacturing optical semiconductor device |
摘要 |
A method for manufacturing an optical semiconductor device includes a step of forming a stacked semiconductor layer on a substrate, the stacked semiconductor layer including a plurality of semiconductor layers; a step of forming a mask on a top layer of the stacked semiconductor layer, the mask covering a portion of the top layer; an exposing step of exposing the top layer of the stacked semiconductor layer to an oxygen-containing atmosphere; after the exposing step, a heating step of heating the stacked semiconductor layer to a temperature of 250° C. or more; and after the heating step, a step of forming a semiconductor mesa in the stacked semiconductor layer, the semiconductor mesa being formed by etching the stacked semiconductor layer by a dry etching method using the mask. The top layer of the plurality of semiconductor layers of the stacked semiconductor layer contains arsenic. |
申请公布号 |
US9123539(B2) |
申请公布日期 |
2015.09.01 |
申请号 |
US201313734083 |
申请日期 |
2013.01.04 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
Masuyama Ryuji |
分类号 |
H01L21/28;H01L21/3205;H01L21/00;H01L21/02;H01L21/3065;H01L21/308;H01S5/22 |
主分类号 |
H01L21/28 |
代理机构 |
Smith, Gambrell & Russell LLP. |
代理人 |
Smith, Gambrell & Russell LLP. |
主权项 |
1. A method for manufacturing an optical semiconductor device, comprising:
a step of forming a stacked semiconductor layer on a substrate, the stacked semiconductor layer including a plurality of semiconductor layers with a top layer of the plurality of layers containing arsenic; a step of forming a mask on the top layer whereby a portion of the top layer is covered by the mask and a region of the top layer is not covered by the mask; an exposing step of exposing the region of the top layer not covered by the mask to an oxygen-containing atmosphere whereby arsenic oxide forms on the region; after the exposing step, a heating step of heating the stacked semiconductor layer to a temperature of 250° C. or more to remove arsenic oxide from the top layer; and after the heating step, a step of forming a semiconductor mesa in the stacked semiconductor layer, the semiconductor mesa being formed by etching the stacked semiconductor layer by a dry etching method using the mask. |
地址 |
Osaka JP |