Low-k dielectric damage repair by vapor-phase chemical exposure

摘要

A method for repairing and lowering the dielectric constant of low-k dielectric layers used in semiconductor fabrication is provided. In one implementation, a method of repairing a damaged low-k dielectric layer comprising exposing the porous low-k dielectric layer to a vinyl silane containing compound and optionally exposing the porous low-k dielectric layer to an ultraviolet (UV) cure process.

主权项

1. A method of repairing a damaged low-k dielectric layer comprising;
exposing a porous low-k dielectric layer to an oxidizing compound; exposing the porous low-k dielectric layer to a silylation agent; and exposing the porous low-k dielectric layer to an ultraviolet (UV) cure process during the exposing the porous low-k dielectric layer to the silylation agent.