| 摘要 |
A gate interconnection portion (GHB) includes a first gate interconnection portion (GHB1), a second gate interconnection portion (GHB2), and a third gate interconnection portion (GHB3). The first gate interconnection portion (GHB1) is formed in parallel to a Y axis direction toward a power supply interconnection and extends to a prescribed position within an element formation region (PER). The second gate interconnection portion (GHB2) is formed in parallel to a direction obliquely bent with respect to the Y-axis direction from the first gate interconnection portion (GHB1) toward the power supply interconnection, and extends across a boundary between the element formation region (PER) and an element isolation insulating film (EB), which is in parallel to an X axis direction. The third gate interconnection portion (GHB3) further extends in parallel to the Y-axis direction from the second gate interconnection portion (GHB2) toward the power supply interconnection. |
