Semiconductor Device And Manufacturing Method Of The Same

摘要

An object is to improve the electrical characteristics of a semiconductor device. A semiconductor device using a hexagonal semiconductor is provided. The semiconductor device comprises a semiconductor substrate, a first N-type semiconductor layer formed on the semiconductor substrate, a P-type semiconductor layer formed on the first N-type semiconductor layer, a second N-type semiconductor layer formed on the P-type semiconductor layer, and a trench concaved to pass through the second N-type semiconductor layer and the P-type semiconductor layer and reach the first N-type semiconductor layer. The trench is arranged to have a longitudinal direction thereof at right angle ±15 degrees to an [11-20] axis and has concavity/convexity in a striped pattern formed on a side wall of the trench to be at right angle to a [0001] axis.

主权项

1. A semiconductor device using a hexagonal semiconductor, comprising:
a semiconductor substrate; a first N-type semiconductor layer formed on the semiconductor substrate; a P-type semiconductor layer formed on the first N-type semiconductor layer; a second N-type semiconductor layer formed on the P-type semiconductor layer; and a trench concaved to pass through the second N-type semiconductor layer and the P-type semiconductor layer and reach the first N-type semiconductor layer, wherein the trench is arranged to have a longitudinal direction thereof at right angle ±15 degrees to an [11-20] axis and has concavity/convexity in a striped pattern formed on a side wall of the trench to be at right angle to a [0001] axis.