发明名称 SEMICONDUCTOR STRUCTURES HAVING T-SHAPED ELECTRODES
摘要 A semiconductor structure having a T-shaped electrode. The electrode has a top portion and a narrower stem portion extending from the top portion to a surface of a substrate. A solid dielectric layer has side portions juxtaposed and abutting sidewalls of a lower portion of the stem of electrode. A bottom surface of the top portion is spaced from an upper surface portion by a non-solid dielectric, such as air.
申请公布号 WO2015126588(A1) 申请公布日期 2015.08.27
申请号 WO2015US13445 申请日期 2015.01.29
申请人 RAYTHEON COMPANY 发明人 HWANG, KIUCHUL;SHAW, DALE, M.;WILLIAMS, ADRIAN, D.
分类号 H01L21/28;H01L21/285;H01L29/423 主分类号 H01L21/28
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