发明名称 |
SEMICONDUCTOR STRUCTURES HAVING T-SHAPED ELECTRODES |
摘要 |
A semiconductor structure having a T-shaped electrode. The electrode has a top portion and a narrower stem portion extending from the top portion to a surface of a substrate. A solid dielectric layer has side portions juxtaposed and abutting sidewalls of a lower portion of the stem of electrode. A bottom surface of the top portion is spaced from an upper surface portion by a non-solid dielectric, such as air. |
申请公布号 |
WO2015126588(A1) |
申请公布日期 |
2015.08.27 |
申请号 |
WO2015US13445 |
申请日期 |
2015.01.29 |
申请人 |
RAYTHEON COMPANY |
发明人 |
HWANG, KIUCHUL;SHAW, DALE, M.;WILLIAMS, ADRIAN, D. |
分类号 |
H01L21/28;H01L21/285;H01L29/423 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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