CLUSTER TYPE SEMICONDUCTOR PROCESSING APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME

摘要

A cluster type semiconductor processing apparatus and a method for manufacturing a semiconductor device using the same are provided. The cluster type semiconductor processing apparatus includes a polyhedral transfer module to transfer a wafer, a first process module communicating with the transfer module, a degassing process of removing fumes from a surface of the wafer being performed in the first process module, a second process module communicating with the transfer module, a plasma cleaning process of cleaning the surface of the wafer being performed in the second process module, a standby module communicating with the transfer module, the wafer having undergone the degassing process and the plasma cleaning process being maintained in the standby module for a certain time, and a third process module communicating with the transfer module, a metal sputtering process of depositing a metal film on the wafer being performed in the third process module.

主权项

1. A cluster type semiconductor processing apparatus comprising:
a polyhedral transfer module to transfer a wafer; a first process module communicating with the transfer module through a first face of the transfer module, and configured to perform a degassing process of removing fumes from a surface of the wafer; a second process module communicating with the transfer module through a second face of the transfer module, and configured to perform a plasma cleaning process of cleaning the surface of the wafer; a standby module communicating with the transfer module through a third face of the transfer module, the wafer having undergone the degassing process and the plasma cleaning process being maintained in a standby state in the standby module for a certain time; and a third process module communicating with the transfer module through a fourth face of the transfer module, and configured to perform a metal sputtering process of depositing a metal film on the wafer having been maintained in the standby state in the standby module.