METHOD OF WRITING TO A SPIN TORQUE MAGNETIC RANDOM ACCESS MEMORY

摘要

A method includes sampling magnetic bits, applying a write current pulse to the magnetic bits to set them to a first logic state, resampling the magnetic bits, and comparing the results of sampling and resampling to determine the bit state for each magnetic bit. A read or write operation may be received after initiation of writing back magnetic bits having the second state, where the write-back can be aborted for a portion of the bits in the case of a write operation. The write-back may be performed such that different portions of the magnetic bits are written back at different times, thereby staggering the write-back current pulses in time. An offset current may also be used during resampling.

主权项

1. A method of operation of a spin-torque magnetoresistive memory, the method comprising:
sampling magnetic bits to provide a sampled voltage for each of the magnetic bits, wherein the magnetic bits correspond to a page within the spin-torque magnetoresistive memory; applying a first write current pulse to each of the magnetic bits to set all of the magnetic bits in the page to a first logic state; resampling each of the magnetic bits in the page to provide a resampled voltage for each magnetic bit; for each magnetic bit in the page, comparing the resampled voltage with the sampled voltage to determine a bit state for the magnetic bit, wherein the bit state for each magnetic bit is either the first logic state or a second logic state; receiving at least one of a read operation and a write operation having an address corresponding to magnetic bits of the page; and prior to receiving the at least one of a read operation and a write operation, for each of the magnetic bits in the page having the second logic state, initiating a write-back, wherein the write-back includes applying a second write current pulse having opposite polarity in comparison with the first write current pulse to set the magnetic bit to the second state.