SEMICONDUCTOR DEVICE AND FABRICATION METHOD

摘要

A semiconductor device comprising a silicon substrate on which is grown a <100 nm thick epilayer of AlAs or related compound, followed by a compound semiconductor other than GaN buffer layer. Further III-V compound semiconductor structures can be epitaxially grown on top. The AlAs epilayer reduces the formation and propagation of defects from the interface with the silicon, and so can improve the performance of an active structure grown on top.

主权项

1. A semiconductor device comprising:
a silicon substrate; an epilayer formed on the substrate; and at least one layer of III-V compound, other than GaN, on the epilayer, wherein the epilayer comprises a compound of the formula:
Al1-x[X]xAswherein:
X is at least one group III element other than Al; x is greater than or equal to 0; and x is less than or equal to 0.5.