METHODS FOR FABRICATING INTEGRATED CIRCUITS INCLUDING GENERATING PHOTOMASKS FOR DIRECTED SELF-ASSEMBLY

摘要

Methods for fabricating integrated circuits are provided. In one example, a method for fabricating an integrated circuit includes generating a photomask for forming a DSA directing pattern overlying a semiconductor substrate. The DSA directing pattern is configured to guide a self-assembly material deposited thereon that undergoes directed self-assembly (DSA) to form a DSA pattern. Generating the photomask includes inputting DSA target patterns. The DSA target patterns are grouped into groups including a first group and a group boundary is defined around the first group as an initial OPC mask pattern. A circle target is generated around each of the DSA target patterns in the first group to define a merged circle target boundary. The initial OPC mask pattern is adjusted and/or iteratively updated using the merged circle target boundary to generate an output final OPC mask pattern.

主权项

1. A method for fabricating an integrated circuit comprising:
generating a photomask for forming a DSA directing pattern overlying a semiconductor substrate, wherein the DSA directing pattern is configured to guide a self-assembly material deposited thereon that undergoes directed self-assembly (DSA) to form a DSA pattern, and wherein generating the photomask comprises:
using a computing system, inputting DSA target patterns;using the computing system, grouping the DSA target patterns into groups including a first group and defining a group boundary around the first group as an initial OPC mask pattern;using the computing system, generating a circle target around each of the DSA target patterns in the first group to define a merged circle target boundary; andusing the computing system, an OPC model, a DSA model, and the merged circle target boundary, adjusting and/or iteratively updating the initial OPC mask pattern to generate an output final OPC mask pattern.