Method for manufacturing a mask having submillimetric apertures for a submillimetric electrically conductive grid, mask having submillimetric apertures and submillimetric electrically conductive grid

摘要

A process for manufacturing a mask having submillimetric openings, in which: for a masking layer, a solution of colloidal nanoparticles that are stabilized and dispersed in a first solvent is deposited, the particles having a given glass transition temperature Tg, the drying of the masking layer is carried out at a temperature below the temperature Tg until a mask having a two-dimensional network of submillimetric openings is obtained with substantially straight mask area edges, in a zone referred to as a network mask zone, a zone free of masking is formed on the face by mechanical and/or optical removal of at least one peripheral portion of the network mask zone. The invention also relates to the network mask and the grid with an electroconductive solid zone that are thus obtained.

主权项

1. A process for manufacturing a submillimetric electroconductive grid on a main face of a substrate, comprising:
(a) depositing an electroconductive material,
(i) on the main face, through submillimetric openings of a network mask until a fraction of a depth of the submillimetric openings is filled, the network mask obtained by
depositing a liquid masking layer as a solution and drying the liquid masking layer, wherein:
for said liquid masking layer, a solution of colloidal nanoparticles stabilized and dispersed in a solvent is deposited, the nanoparticles having a glass transition temperature Tg;said drying of the masking layer is carried out at a temperature below said temperature Tg until the network mask having a two-dimensional network of the submillimetric openings is obtained with substantially straight mask area edges, the network mask being on a network mask zone, andprior to depositing the electroconductive material, forming a zone free of masking on said main face by mechanical and/or optical removal of at least one peripheral portion of the network mask zone,(ii) and on the zone free of masking so that the electroconductive material connects the zone free of masking to the submillimetric openings; and (b) removing the network mask revealing the submillimetric electroconductive grid.