发明名称 Induced field determination using diffuse field reciprocity
摘要 Methods and systems are provided for determining the surface electromagnetic impedance of a conductive element and applying the diffuse field reciprocity principle using that surface electromagnetic impedance to determine electric fields induced in the conductive element. An exemplary method involves determining a surface electromagnetic impedance matrix for the conductive element based on its physical dimensions and an excitation frequency for an incident electromagnetic wavefield, applying diffuse field reciprocity to determine a metric indicative of an induced field based on the surface electromagnetic impedance matrix and an energy metric for the incident electromagnetic wavefield, and displaying a graphical representation of the metric on a display device.
申请公布号 US9117040(B2) 申请公布日期 2015.08.25
申请号 US201113227330 申请日期 2011.09.07
申请人 发明人 Langley Robin Stewart
分类号 G06F7/60;G06F17/10;G06F17/50;G01V3/165 主分类号 G06F7/60
代理机构 Bryan Cave LLP 代理人 Bryan Cave LLP
主权项 1. A method comprising: executing one or more first computer instructions configured to predict a response of a conductive element to an electromagnetic wavefield incident to a surface of the conductive element, wherein executing the one or more first computer instructions comprises: executing one or more second computer instructions configured to determine an electromagnetic impedance associated with electromagnetic radiation at the surface of the conductive element in an infinite dielectric medium; andexecuting one or more third computer instructions configured to apply diffuse field reciprocity using the electromagnetic impedance to obtain a metric indicative of an induced field resulting from the electromagnetic wavefield incident to the surface of the conductive element; and executing one or more fourth computer instructions configured to display an output based on the metric on a display device; wherein: executing the one or more first computer instructions further comprises at least one of (i) executing one or more fifth computer instructions configured to determine an induced current metric based on the metric or (ii) executing one or more sixth computer instructions configured to determine a voltage recovery matrix for the conductive element and executing one or more seventh computer instructions configured to determine an induced voltage metric based on the voltage recovery matrix and the metric; when executing the one or more first computer instructions comprises executing the one or more fifth computer instructions: executing the one or more fourth computer instructions comprises executing one or more eight computer instruction configured to display a graphical representation of the induced current metric on the display device, the output comprising the graphical representation of the induced current metric;the induced current metric comprises an induced current as a function of position along the surface of the conductive element; andthe graphical representation of the induced current metric comprises a graph of the induced current as the function of position along the surface of the conductive element; when executing the one or more first computer instructions comprises executing the one or more sixth computer instructions and the one or more seventh computer instructions; executing the one or more fourth computer instructions comprises executing one or more ninth computer instruction configured to display a graphical representation of the induced voltage metric on the display device, the output comprising the graphical representation of the induced voltage metric;the induced voltage metric comprises an induced voltage as a function of position along the surface of the conductive element; andthe graphical representation of the induced voltage metric comprises a graph of the induced voltage as the function of position along the surface of the conductive element; and the one or more first computer instructions and the one or more fourth computer instructions are configured to run at one or more processors and configured to be stored at one or more non-transitory memory storage modules.
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