发明名称 METHOD FOR MANUFACTURING WAFER AND WAFER MANUFACTURED BY THE METHOD
摘要 PROBLEM TO BE SOLVED: To provide a method for manufacturing a wafer including a laser mark which does not cause a process failure, and a wafer manufactured by the method.SOLUTION: A method for manufacturing a wafer includes: a step S10 of preparing a wafer with a known crystal orientation; a step S20 of forming at least one first mark having a first depth in the wafer; a step S30 of polishing a surface of the wafer; and a step S40 of forming at least one second mark having a second depth shallower than the first depth in the wafer. The step of polishing the surface of the wafer includes a step of removing the surface on which the first mark is formed in a first thickness smaller than the first depth. The second mark is formed so as to separate from the first mark. The wafer includes a front surface, a rear surface, and a side surface. The first mark and the second mark are respectively formed on at least one of the front surface, the rear surface, and the side surface.
申请公布号 JP2015154075(A) 申请公布日期 2015.08.24
申请号 JP20140251672 申请日期 2014.12.12
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 KOO TAE-HYOUNG;CHOI SAMJONG;LEE DONGJUN;KO YONGSUN
分类号 H01L21/02;B23K26/00 主分类号 H01L21/02
代理机构 代理人
主权项
地址