发明名称 |
LINE STRUCTURE AND A METHOD FOR PRODUCING THE SAME |
摘要 |
A multi-layer line structure including a substrate, a lower layer Cu line located on the substrate, an upper layer Cu line located on an insulating layer including an inorganic film located on the lower layer Cu line and an organic resin film located on the inorganic film, and a via connection part located in a via connection hole running in an up-down direction through the insulating layer in an area where the lower layer Cu line and the upper layer Cu line overlap each other is provided. The via connection part includes a barrier conductive layer located on a part of the lower layer Cu line exposed to a bottom part of the via connection hole and on an inner wall of the via connection hole. |
申请公布号 |
US2015235955(A1) |
申请公布日期 |
2015.08.20 |
申请号 |
US201514704096 |
申请日期 |
2015.05.05 |
申请人 |
Dai Nippon Printing Co., Ltd. |
发明人 |
Kudo Hiroshi;Takano Takamasa |
分类号 |
H01L23/532;H01L21/768;H01L23/522 |
主分类号 |
H01L23/532 |
代理机构 |
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代理人 |
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主权项 |
1. A multi-layer line structure, comprising:
a substrate; a lower layer Cu line located on the substrate; an upper layer Cu line located on an insulating layer including an inorganic film located on the lower layer Cu line and an organic resin film located on the inorganic film; and a via connection part located in a via connection hole running in an up-down direction through the insulating layer in an area where the lower layer Cu line and the upper layer Cu line overlap each other; wherein: the via connection part includes a barrier conductive layer located on a part of the lower layer Cu line exposed to a bottom part of the via connection hole and on an inner wall of the via connection hole; the inorganic film is formed so as to cover a top surface and a side surface of the lower layer Cu line; a material forming the organic resin film has a dielectric constant lower than a dielectric constant of a material forming the inorganic film. |
地址 |
Tokyo JP |