| 摘要 |
The objective of the present invention is to provide an electro-optic modulator which is capable of injecting carriers into a silicon-containing i-type amorphous semiconductor, especially into a-Si:H at a high rate, while being suppressed in optical loss. An electro-optic modulator which is provided with: a substrate (201); an optical waveguide (204) that is formed on the substrate and is formed of a silicon-containing i-type amorphous semiconductor; and a silicon-containing p-type semiconductor layer (203) and a silicon-containing n-type semiconductor layer (205) that are arranged apart from each other, with the optical waveguide formed of a silicon-containing i-type amorphous semiconductor being interposed therebetween, so as to constitute an optical waveguide together with the optical waveguide (204) formed of a silicon-containing i-type amorphous semiconductor. The silicon-containing p-type semiconductor layer (203) and/or the silicon-containing n-type semiconductor layer (205) is a crystalline semiconductor layer. |
