| 发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE |
| 摘要 |
A method includes followings operations. A substrate including a first surface and a second surface is provided. The substrate and a transparent film are heated to attach the transparent film on the first surface. A first coefficient of a thermal expansion (CTE) mismatch is between the substrate and the transparent film. The substrate and the transparent film are cooled. A polymeric material is disposed on the second surface. A second CTE mismatch is between the substrate and the polymeric material. The second CTE mismatch is counteracted by the first CTE mismatch. |
| 申请公布号 |
US2015235874(A1) |
申请公布日期 |
2015.08.20 |
| 申请号 |
US201414183913 |
申请日期 |
2014.02.19 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. |
发明人 |
YU CHEN-HUA;HUANG CHIH-FAN;LIN CHUN-HUNG;CHENG MING-DA;LIU CHUNG-SHI;LII MIRNG-JI |
| 分类号 |
H01L21/56;G01N25/16;H01L23/00;H01L21/268;H01L25/00 |
主分类号 |
H01L21/56 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method, comprising:
providing a substrate including a first surface and a second surface; heating the substrate and a transparent film to attach the transparent film on the first surface, wherein a first coefficient of a thermal expansion (CTE) mismatch is between the substrate and the transparent film; cooling the substrate and the transparent film; and disposing a polymeric material on the second surface, wherein a second CTE mismatch is between the substrate and the polymeric material and the second CTE mismatch is counteracted by the first CTE mismatch. |
| 地址 |
HSINCHU TW |
