Self-aligned emitter-base-collector bipolar junction transistors with a single crystal raised extrinsic base

摘要

Fabrication methods, device structures, and design structures for a bipolar junction transistor. An intrinsic base layer is formed on a semiconductor substrate, an etch stop layer is formed on the intrinsic base layer, and an extrinsic base layer is formed on the etch stop layer. A trench is formed that penetrates through the extrinsic base layer to the etch stop layer. The trench is formed by etching the extrinsic base layer selective to the etch stop layer. The first trench is extended through the etch stop layer to the intrinsic base layer by etching the etch stop layer selective to the intrinsic base layer. After the trench is extended through the etch stop layer, an emitter is formed using the trench.

主权项

1. A method of forming a device structure for a bipolar junction transistor, the method comprising:
forming an intrinsic base layer on a semiconductor substrate; forming an etch stop layer on the intrinsic base layer; forming an extrinsic base layer on the etch stop layer; forming a first trench penetrating through the extrinsic base layer to the etch stop layer by etching the extrinsic base layer selective to the etch stop layer; forming a second trench penetrating through the extrinsic base layer to the etch stop layer; extending the first trench through the etch stop layer to the intrinsic base layer by etching the etch stop layer selective to the intrinsic base layer; extending the second trench through the etch stop layer to the intrinsic base layer; and after the first trench is extended through the etch stop layer, forming an emitter using the first trench, wherein the second trench is concurrently formed with the first trench, and the second trench is concurrently extended through the etch stop layer with the first trench.