发明名称 |
Film deposition apparatus, substrate processing apparatus and film deposition method |
摘要 |
A film deposition apparatus configured to perform a film deposition process on a substrate in a vacuum chamber includes a turntable configured to rotate a substrate loading area to receive the substrate, a film deposition area including at least one process gas supplying part configured to supply a process gas onto the substrate loading area and configured to form a thin film by depositing at least one of an atomic layer and a molecular layer along with a rotation of the turntable, a plasma treatment part provided away from the film deposition area in a rotational direction of the turntable and configured to treat the at least one of the atomic layer and the molecular layer for modification by plasma, and a bias electrode part provided under the turntable without contacting the turntable and configured to generate bias potential to attract ions in the plasma toward the substrate. |
申请公布号 |
US9111747(B2) |
申请公布日期 |
2015.08.18 |
申请号 |
US201313916847 |
申请日期 |
2013.06.13 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
Yamawaku Jun;Koshimizu Chishio;Tachibana Mitsuhiro;Kato Hitoshi;Kobayashi Takeshi;Miura Shigehiro;Kimura Takafumi |
分类号 |
H01L21/31;H01L21/02;C23C16/455;C23C16/509;H01L21/687 |
主分类号 |
H01L21/31 |
代理机构 |
IPUSA, PLLC |
代理人 |
IPUSA, PLLC |
主权项 |
1. A film deposition apparatus configured to perform a film deposition process on a substrate in a vacuum chamber, the film deposition apparatus comprising:
a turntable configured to rotate a substrate loading area to receive the substrate; a film deposition area including at least one process gas supplying part configured to supply a process gas onto the substrate loading area and configured to form a thin film by depositing at least one of an atomic layer and a molecular layer along with a rotation of the turntable; a plasma treatment part provided away from the film deposition area in a rotational direction of the turntable and configured to treat the at least one of the atomic layer and the molecular layer for modification by plasma generated by converting a plasma generating gas to the plasma; a bias electrode part provided under the turntable without contacting the turntable and configured to generate bias potential to attract ions in the plasma toward the substrate; an insulating member provided between the turntable and the bias electrode part; and an evacuation mechanism configured to evacuate the vacuum chamber. |
地址 |
Tokyo JP |