发明名称 Film deposition apparatus, substrate processing apparatus and film deposition method
摘要 A film deposition apparatus configured to perform a film deposition process on a substrate in a vacuum chamber includes a turntable configured to rotate a substrate loading area to receive the substrate, a film deposition area including at least one process gas supplying part configured to supply a process gas onto the substrate loading area and configured to form a thin film by depositing at least one of an atomic layer and a molecular layer along with a rotation of the turntable, a plasma treatment part provided away from the film deposition area in a rotational direction of the turntable and configured to treat the at least one of the atomic layer and the molecular layer for modification by plasma, and a bias electrode part provided under the turntable without contacting the turntable and configured to generate bias potential to attract ions in the plasma toward the substrate.
申请公布号 US9111747(B2) 申请公布日期 2015.08.18
申请号 US201313916847 申请日期 2013.06.13
申请人 TOKYO ELECTRON LIMITED 发明人 Yamawaku Jun;Koshimizu Chishio;Tachibana Mitsuhiro;Kato Hitoshi;Kobayashi Takeshi;Miura Shigehiro;Kimura Takafumi
分类号 H01L21/31;H01L21/02;C23C16/455;C23C16/509;H01L21/687 主分类号 H01L21/31
代理机构 IPUSA, PLLC 代理人 IPUSA, PLLC
主权项 1. A film deposition apparatus configured to perform a film deposition process on a substrate in a vacuum chamber, the film deposition apparatus comprising: a turntable configured to rotate a substrate loading area to receive the substrate; a film deposition area including at least one process gas supplying part configured to supply a process gas onto the substrate loading area and configured to form a thin film by depositing at least one of an atomic layer and a molecular layer along with a rotation of the turntable; a plasma treatment part provided away from the film deposition area in a rotational direction of the turntable and configured to treat the at least one of the atomic layer and the molecular layer for modification by plasma generated by converting a plasma generating gas to the plasma; a bias electrode part provided under the turntable without contacting the turntable and configured to generate bias potential to attract ions in the plasma toward the substrate; an insulating member provided between the turntable and the bias electrode part; and an evacuation mechanism configured to evacuate the vacuum chamber.
地址 Tokyo JP