ＧａＮ基板、ＧａＮ基板之制造方法、ＧａＮ结晶之制造方法及半导体装置之制造方法;GaN SUBSTRATE, METHOD FOR PRODUCING GaN SUBSTRATE, METHOD FOR PRODUCING GaN CRYSTAL, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE

摘要

本发明提供一种用以于使用铺砌法制造之主表面之法线与m轴之间之角度为0°以上且20°以下、且直径45~55mm之圆盘形GaN基板中，将构成该基板之结晶区域之个数削减为4个以下之技术。根据较佳之实施形态，提供一种GaN基板，该GaN基板系具有第1主表面及其相反侧之第2主表面，且上述第1主表面之法线与m轴之间之角度为0°以上且20°以下之直径45mm以上的圆盘形GaN基板，且由分别于上述第1主表面及第2主表面之两者露出之4个以下之结晶区域构成，该4个以下之结晶区域沿上述第1主表面上之c轴之正投影之方向排成一行。 In a disc shaped GaN substrate which is produced by tiling, wherein an angle formed between a normal line of a main surface of the substrate and an m axis is in the range of 0° to 20° and a diameter of the substrate is 45 to 55mm, to provide a technology to reduce the number of crystalline regions constituting the substrate to 4 or less. According to preferable examples, provided is a disc shaped GaN substrate including a first main surface and a second main surface on the other side, wherein an angle formed between a normal line of the first main surface and an m axis is in the range of 0°