Multigate metal oxide semiconductor devices and fabrication methods

摘要

A semiconductor device includes a first well and a second well implanted in a semiconductor substrate. The semiconductor device further includes a gate structure above the first and second wells between a raised source structure and a raised drain structure. The raised source structure above is in contact with the first well and connected with the gate structure through a first semiconductor fin structure. The raised drain structure above and in contact with the second well and connected with a second semiconductor fin structure. The second semiconductor fin structure includes at least a gap and a lightly doped portion.

主权项

1. A semiconductor device, comprising:
a first well implanted in a semiconductor substrate; a second well implanted in the semiconductor substrate; a gate structure above the first and second wells; a raised source structure above and in contact with the first well and connected with the gate structure through a first semiconductor fin structure; and a raised drain structure above and in contact with the second well and connected with a second semiconductor fin structure, wherein the second semiconductor fin structure defines a gap along the second semiconductor fin structure that separates the second semiconductor fin structure from the raised drain structure.