发明名称 Method of patterning a device
摘要 A fluorinated photopolymer is formed on a device substrate and exposed to patterned radiation. The photopolymer has a total fluorine content in a weight range of 15 to 60% and comprises at least three distinct repeating units, including a first repeating unit having a fluorine-containing group, a second repeating unit having an acid- or alcohol-forming precursor group, and a third repeating unit different from the first and second repeating units. The pattern-exposed photopolymer layer is contacted with a developing solution comprising at least a first fluorinated solvent that dissolves the unexposed photopolymer thereby forming a developed structure having a first pattern of photopolymer covering the substrate and a complementary second pattern of uncovered substrate. The developing solution is selected to provide a maximum photopolymer contrast in a range of 1.9 to 5.0.
申请公布号 US9104104(B2) 申请公布日期 2015.08.11
申请号 US201414260705 申请日期 2014.04.24
申请人 Orthogonal, Inc. 发明人 Wright Charles Warren;Freeman Diane Carol;Byrne Frank Xavier;DeFranco John Andrew;Rubsam Sandra;O'Toole Terrence Robert;Robello Douglas Robert
分类号 G03F7/26;G03F7/038;G03F7/40;G03F7/20;G03F7/42 主分类号 G03F7/26
代理机构 Merchant & Gould P.C. 代理人 Merchant & Gould P.C.
主权项 1. A method of patterning a device comprising: providing a layer of a fluorinated photopolymer over a device substrate, the fluorinated photopolymer comprising at least three distinct repeating units, including a first repeating unit having a fluorine-containing group, a second repeating unit having an acid- or alcohol-forming precursor group, and a third repeating unit different from the first and second repeating units, wherein the photopolymer has a total fluorine content in a weight range of 15 to 60%; exposing the photopolymer layer to patterned radiation to form an exposed photopolymer layer having a pattern of exposed photopolymer and a complementary pattern of unexposed photopolymer, wherein at least some of the acid- or alcohol-forming precursor groups in the exposed pattern react to form acid or alcohol groups; and contacting the exposed photopolymer layer with a developing solution comprising at least a first hydrofluoroether that dissolves the unexposed photopolymer thereby forming a developed structure having a first pattern of photopolymer covering the substrate and a complementary second pattern of uncovered substrate, the developing solution selected to provide a maximum photopolymer contrast in a range of 1.9 to 5.0 for at least a 15 sec time window within a development contact time period of 15 to 150 seconds.
地址 Rochester NY US
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