发明名称 Carbon material covered with diamond thin film and method of manufacturing same
摘要 A carbon material and a method of manufacturing the carbon material are provided. By affixing diamond particles onto a carbonaceous substrate in a condition in which etching caused by hydrogen radicals is unlikely to occur, the substrate etching rate can be suppressed, and the carbon material is allowed to have a diamond thin film having excellent adhesion capability. The carbon material has a carbonaceous substrate showing a weight decrease under a diamond synthesis condition, diamond particles disposed on a surface of the carbonaceous substrate, and a diamond layer having the diamond particles as seeds. The weight of the diamond particles per unit area is set to from 1.0×10−4 g/cm2 to less than 3.0×10−3 g/cm2.
申请公布号 US9102541(B2) 申请公布日期 2015.08.11
申请号 US201013260065 申请日期 2010.03.19
申请人 TOYO TANSO CO., LTD. 发明人 Kawano Takanori;Tao Rie
分类号 B32B9/00;C01B31/06;C23C16/02;C23C16/27 主分类号 B32B9/00
代理机构 Westerman, Hattori, Daniels & Adrian, LLP 代理人 Westerman, Hattori, Daniels & Adrian, LLP
主权项 1. A carbon material consisting essentially of: a carbonaceous substrate, diamond particles disposed on a surface of the carbonaceous substrate, and a diamond layer consisting essentially of the diamond particles as seeds, at least one electrical conductivity-imparting element, and a diamond thin film characterized in that: the weight of the diamond particles per unit area is from 1.0×10−4 g/cm2 to less than 3.0×10−3 g/cm2, wherein the at least one electrical conductivity-imparting element is selected from the group consisting of nitrogen, boron, and phosphorus; the diamond layer has an electrical resistance of 1×10−3 Ω·cm or higher and less than 5×10−3 Ω·cm; the diamond layer is formed by crystal growth by chemical vapor deposition with the diamond particles as seeds uniformly disposed on the surface of the carbonaceous substrate; and the diamond layer is a polycrystalline film containing a diamond thin film covering the surface of the carbonaceous substrate and the diamond particles have automorphism.
地址 Osaka JP