| 发明名称 |
METHOD OF SYNTHESISING NANOCRYSTALLINE SILICON CARBIDE |
| 摘要 |
FIELD: chemistry.SUBSTANCE: method includes the plasmodynamic synthesis of silicon carbide in a hypervelocity jet of an electric discharge plasma, which contains silicon and carbon in a ratio of 3.0:1, generated by a coaxial magnetic-plasma accelerator with graphite electrodes and directed into a closed volume, filled with gaseous argon under normal pressure and a temperature of 20°C, with the temperature of gaseous argon in the closed volume being changed in the range from -20°C to 19°C and from 21°C to 60°C.EFFECT: regulation of nanocrystalline silicon carbide dispersion.1 dwg, 1 tbl |
| 申请公布号 |
RU2559510(C1) |
申请公布日期 |
2015.08.10 |
| 申请号 |
RU20140114078 |
申请日期 |
2014.04.09 |
| 申请人 |
FEDERAL'NOE GOSUDARSTVENNOE BJUDZHETNOE OBRAZOVATEL'NOE UCHREZHDENIE VYSSHEGO PROFESSIONAL'NOGO OBRAZOVANIJA "NATSIONAL'NYJ ISSLEDOVATEL'SKIJ TOMSKIJPOLITEKHNICHESKIJ UNIVERSITET" |
发明人 |
SIVKOV ALEKSANDR ANATOL'EVICH;NIKITIN DMITRIJ SERGEEVICH;PAK ALEKSANDR JAKOVLEVICH;RAKHMATULLIN IL'JAS AMINOVICH |
| 分类号 |
C30B29/36;B01J19/08;B82B1/00;B82Y30/00;C01B31/36 |
主分类号 |
C30B29/36 |
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